| PART |
Description |
Maker |
| EB201 EB201D |
High Cell Density MOSFETs Low On-Resistance Affords New Design Options
|
ONSEMI[ON Semiconductor]
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| TSM2307CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., L...
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2301 |
Super high density cell design for
|
Advanced Monolithic Systems Ltd
|
| WPM3005 WPM3005-3TR |
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
